| PART |
Description |
Maker |
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8
600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
|
| NGB8202AN NGB8202NT4G NGB8202N11 NGB8202ANT4G |
Ignition IGBT 20 A, 400 V, N.Channel D2PAK
|
ON Semiconductor
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2MBI400N-060-01 2MBI400N-060-01B |
IGBT(600V / 400A)
Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket
400 A, 600 V, N-CHANNEL IGBT
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
|
